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TOPCon
(Tunnel Oxide Passivated Contact)

This is largely attributed to the dual passivation effect of N-type silicon substrates and amorphous silicon, effectively mitigating surface defects.

Currently, our mass production efficiency consistently exceeds 26%.

  • N-type

    Silicon Substrate

  • Dual

    Passivation

  • 26%+

    Yield Efficiency

    • Advantages of N-type Cells

    • Resistance to light-induced degradation

    • Excellent weak light response

    • Low temperature coefficient

    • High conversion efficiency with superior bifacial efficiency

    • Prolonged carrier lifetime

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